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Highly efficient Ternary Solar Cells of 10.2% with Core/Shell Quantum Dots via FRET Effect
Author(s) -
Han Yong Woon,
Jeon Sung Jae,
Choi Jun Young,
Kim Joo Hyun,
Moon Doo Kyung
Publication year - 2018
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201800077
Subject(s) - quantum dot , x ray photoelectron spectroscopy , materials science , photocurrent , photoluminescence , ternary operation , active layer , optoelectronics , energy conversion efficiency , spectroscopy , analytical chemistry (journal) , nanotechnology , layer (electronics) , chemical engineering , chemistry , physics , quantum mechanics , chromatography , computer science , engineering , programming language , thin film transistor
Ternary organic solar cells (OSCs) with the efficiency over 10% are fabricated as an inverted structure with core/shell type quantum dots (QDs) as third component. Förster resonance energy transfer occurs due to overlap between the emission range ( λ em = 500–800 nm) of InP/ZnS QDs and the absorption range ( λ abs = 550–800 nm) of PTB7‐Th donor polymer. InP/ZnS QDs increase the photocurrent of the hybrid active layer via the strong emission properties of ZnS shells surrounding the InP core QDs, which transfer photon energy to PTB7‐Th (UV‐vis spectroscopy and photoluminescence). X‐ray photoelectron spectroscopy (XPS) depth profiling reveals that InP/ZnS QDs are distributed on the surface of the hybrid active layer, while grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) analysis reveals that these QDs enhance the crystalline structure of the hybrid active layer. The incorporation of an ethanedithiol (EDT)‐modified ZnO layer as an electron transport layer enhances the carrier transport and decreases carrier recombination, providing a uniform morphology and surface potential favorable for electron extraction and transport, as indicated by atomic force microscopy and electrostatic force microscopy analyses. Due to the synergistic effects of InP/ZnS QDs and the EDT‐modified ZnO layer, the power conversion efficiency (PCE) is 10.2% via the enhancement in short‐circuit current density ( J SC ) from 17.4 to 18.4 mA cm −2 and fill factor (FF) from 67.2 to 69.3%.