Premium
Restraining the Band Fluctuation of CBD‐Zn(O,S) Layer: Modifying the Hetero‐Junction Interface for High Performance Cu 2 ZnSnSe 4 Solar Cells With Cd‐Free Buffer Layer (Solar RRL 10∕2017)
Author(s) -
Li Jianjun,
Liu Xiaoru,
Liu Wei,
Wu Li,
Ge Binghui,
Lin Shuping,
Gao Shoushuai,
Zhou Zhiqiang,
Liu Fangfang,
Sun Yun,
Ao Jianping,
Zhu Hongbing,
Mai Yaohua,
Zhang Yi
Publication year - 2017
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201770135
Subject(s) - kesterite , thin film solar cell , materials science , buffer (optical fiber) , annealing (glass) , optoelectronics , layer (electronics) , thin film , solar cell , analytical chemistry (journal) , chemical engineering , czts , nanotechnology , chemistry , computer science , metallurgy , telecommunications , engineering , chromatography
Here (article No. 201700075 ), a simple and feasible way to improve the interface performance of Zn(O,S) buffered kesterite thin film solar cells is reported. By a concentrated ammonium etching and subsequent soft annealing treatment, the detrimental ZnO and Zn(OH)2 secondary phases are eliminated from the Zn(O,S) layer, and the hetero‐junction performance is improved significantly, which gives rise to the boost of device performance from 1.17% to 7.2%. The temperature dependent J–V properties reveal a defect level assisted charge carrier transport mechanism across the Zn(O,S)/CZTSe interface. These encouraging results imply that Zn(O,S) buffer layer is a promising substitution for toxic CdS in the future manufacturing of high performance thin film solar cells.