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Front Cover: Solar RRL 5∕2017
Author(s) -
Zhang Yan,
Li Jianmin,
Jiang Guoshun,
Liu Weifeng,
Yang Shangfeng,
Zhu Changfei,
Chen Tao
Publication year - 2017
Publication title -
solar rrl
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201770114
Subject(s) - open circuit voltage , selenium , band gap , energy conversion efficiency , optoelectronics , solar cell , materials science , heterojunction , short circuit , voltage , absorption (acoustics) , chemistry , optics , electrical engineering , composite material , physics , engineering , metallurgy
To obtain high power conversion efficiency in a solar cell, both open‐circuit voltage and short‐circuit current density should be simultaneously improved. The graded band structure is able to boost the two parameters at the same time. By controlling the selenium diffusion in Sb 2 S 3 film, Chet et al. (article No. 1700017 ) report a selenium‐graded Sb 2 (S 1‐x ,Se x ) 3 for active layer in planar heterojunction solar cell. Sb 2 (S 1‐x ,Se x ) 3 is a kind of semiconducting material with high absorption coefficient and an abundant elemental storage. By altering the sulfur/selenium ratio in the compound, the band gap of Sb 2 (S 1‐x ,Se x ) 3 is tunable in 1.1‐1.8 eV, suitable for optimized sunlight absorption. Here, the wide band gap sulfur‐rich Sb 2 (S 1‐x ,Se x ) 3 is positioned in the front side of the solar cell to achieve high voltage output, while the selenium‐rich Sb 2 (S 1‐x ,Se x ) 3 is subsequently generated on the back side of Sb 2 S 3 , rendering an expanded light response. With this kind of light absorption layer, a device composed of FTO/TiO 2 /sulfur‐rich Sb 2 (S 1‐x ,Se x ) 3 /selenium‐rich Sb 2 (S 1‐x ,Se x ) 3 /Spiro‐MeOTAD/Au delivers a certified power conversion efficiency of 5.71%.