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Laser‐Patterned n‐Type Front‐Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection
Author(s) -
Wan Yimao,
Hsiao PeiChieh,
Zhang Wei,
Len Alison,
Chen Yifeng,
Feng Zhiqiang,
Verlinden Pierre,
Samundsett Christian,
Cui Jie,
Yan Di,
Cuevas Andres
Publication year - 2018
Publication title -
solar rrl
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.544
H-Index - 37
ISSN - 2367-198X
DOI - 10.1002/solr.201700187
Subject(s) - materials science , passivation , optoelectronics , tantalum nitride , silicon nitride , solar cell , silicon , stack (abstract data type) , laser ablation , tantalum , oxide , laser , layer (electronics) , metallurgy , optics , nanotechnology , physics , computer science , programming language
This work demonstrates, for the first time, a tantalum oxide/silicon nitride (Ta 2 O 5 /SiN x ) stack as a combined passivation and antireflection coating deposited on the boron‐diffused front surface of n‐type silicon solar cells. Due to the high chemical resistance of Ta 2 O 5 , the patterning of the films is realized via picosecond laser ablation, followed by a field‐induced metal plating of nickel and copper to form the front metal grid electrode. A solar cell conversion efficiency of 19.3% is achieved, and further improvements are anticipated from the optimization of the laser ablation process and the tuning of the thickness of the individual layers of the dielectric stack.