Premium
Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS 2 Monolayer (Small Methods 6/2021)
Author(s) -
Wei Zheng,
Tang Jian,
Li Xuanyi,
Chi Zhen,
Wang Yu,
Wang Qinqin,
Han Bo,
Li Na,
Huang Biying,
Li Jiawei,
Yu Hua,
Yuan Jiahao,
Chen Hailong,
Sun Jiatao,
Chen Lan,
Wu Kehui,
Gao Peng,
He Congli,
Yang Wei,
Shi Dongxia,
Yang Rong,
Zhang Guangyu
Publication year - 2021
Publication title -
small methods
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 4.66
H-Index - 46
ISSN - 2366-9608
DOI - 10.1002/smtd.202170026
Subject(s) - monolayer , wafer , doping , chemical vapor deposition , materials science , oxygen , optoelectronics , nanotechnology , analytical chemistry (journal) , chemistry , environmental chemistry , organic chemistry
In article number 2100091, Yang, Zhang, and co‐workers realize in situ substitutional oxygen doping of 2‐inch wafer‐scale monolayer MoS 2 through chemical vapor deposition. The doped films (MoS 2‐ x O x ) are uniform with tunable doping levels and their bandgaps decrease with the increased oxygen concentrations. Wafer‐scale monolayer MoS 2‐ x O x films hold promise on the practical applications for high‐performance large‐scale 2D electronic devices.