Premium
Low Lattice Mismatch InSe–Se Vertical Van der Waals Heterostructure for High‐performance Transistors via Strong Fermi‐Level Depinning (Small Methods 8/2020)
Author(s) -
Jiang Jianfeng,
Meng Fanqi,
Cheng Qilin,
Wang Aizhu,
Chen Yuke,
Qiao Jie,
Pang Jinbo,
Xu Weidong,
Ji Hao,
Zhang Yu,
Zhang Qinghua,
Wang Shanpeng,
Feng Xianjin,
Gu Lin,
Liu Hong,
Han Lin
Publication year - 2020
Publication title -
small methods
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.66
H-Index - 46
ISSN - 2366-9608
DOI - 10.1002/smtd.202070032
Subject(s) - heterojunction , van der waals force , condensed matter physics , lattice (music) , fermi gas , fermi level , materials science , fermi gamma ray space telescope , physics , quantum mechanics , electron , molecule , acoustics
In article number 2000238, Hong Liu, Lin Han, and co‐workers present InSe‐Se vertical van der Waals (vdW) heterostructures to address a formidable contact engineering challenge, which have a low lattice mismatch of 1.1% and form 2D/2D low‐resistance vdW contacts, creating an InSe contact interface that substantially limits chemical disorder and Fermi‐level pinning.