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Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature
Author(s) -
Park JiHoon,
Lu AngYu,
Shen PinChun,
Shin Bong Gyu,
Wang Haozhe,
Mao Nannan,
Xu Renjing,
Jung Soon Jung,
Ham Donhee,
Kern Klaus,
Han Yimo,
Kong Jing
Publication year - 2021
Publication title -
small methods
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.66
H-Index - 46
ISSN - 2366-9608
DOI - 10.1002/smtd.202000720
Subject(s) - molybdenum disulfide , chemical vapor deposition , monolayer , materials science , metalorganic vapour phase epitaxy , substrate (aquarium) , nanoelectronics , nanotechnology , molybdenum , optoelectronics , doping , layer (electronics) , metallurgy , epitaxy , oceanography , geology
The large‐area synthesis of high‐quality MoS 2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS 2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS 2 with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS 2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm 2 V −1 s −1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS 2 growth process via a geometric model of the MoS 2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.