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Epitaxial Growth of Topological Insulators on Semiconductors (Bi 2 Se 3 /Te@Se) toward High‐Performance Photodetectors
Author(s) -
Zhang Ye,
Zhang Feng,
Xu Yiguo,
Huang Weichun,
Wu Leiming,
Dong Zhijun,
Zhang Yupeng,
Dong Biqing,
Zhang Xiuwen,
Zhang Han
Publication year - 2019
Publication title -
small methods
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.66
H-Index - 46
ISSN - 2366-9608
DOI - 10.1002/smtd.201900349
Subject(s) - photodetection , materials science , heterojunction , optoelectronics , photodetector , epitaxy , semiconductor , tellurium , topological insulator , electron mobility , nanotechnology , physics , layer (electronics) , condensed matter physics , metallurgy
Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi 2 Se 3 /Te@Se heterojunctions (Bi 2 Se 3 /Te@Se) are synthesized through the epitaxial growth of Bi 2 Se 3 nanosheets (Bi 2 Se 3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low‐cost and facile solvothermal process. Bi 2 Se 3 /Te@Se are further applied in high‐performance photoelectrochemical (PEC)‐type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as‐prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self‐driven ability and excellent long‐term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high‐performance optoelectronic devices.