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Ultrasensitive and stable all graphene field‐effect transistor‐based Hg 2+ sensor constructed by using different covalently bonded RGO films assembled by different conjugate linking molecules
Author(s) -
Sun Mingyuan,
Zhang Congcong,
Chen Duo,
Wang Jian,
Ji Yanchen,
Liang Na,
Gao Haoyang,
Cheng Shanshan,
Liu Hong
Publication year - 2021
Publication title -
smartmat
Language(s) - English
Resource type - Journals
ISSN - 2688-819X
DOI - 10.1002/smm2.1030
Subject(s) - graphene , materials science , covalent bond , transistor , semiconductor , optoelectronics , field effect transistor , electrode , nanotechnology , phase (matter) , chemical engineering , chemistry , organic chemistry , electrical engineering , engineering , voltage
As "molecular bridge," coupling agents can not only realize the covalent connection of composites, but also affect their properties, thus affecting the properties of devices based on them. Herein, leveraging differences in charge conduction properties of the (3‐aminopropyl)trimethoxysilane and 5,10,15,20‐tetrakis(4‐aminophenyl)‐21H,23H‐porphine caused by conjugacy structural differences, two kinds of layer‐by‐layer assembled smart carbon materials with different electrical properties are obtained at the same reduction temperature. The two graphene ultrathin films are then “planted” on Si/SiO 2 substrates, respectively, as semiconductor layer and source/drain electrodes to fabricate an ultra‐stable all‐graphene field effect transistor (AG‐FET). Enabled by the covalent functionalized configuration and the functionally diverse of coupling agents, the AG‐FET obtained by this simple method won the high electrical characteristics, the hole, electron mobility, and the shelflife could reach 3.79 cm 2 /(V·s), 3.78 cm 2 /(V·s), and 18 months, respectively. In addition, good material stability and excellent device structure endow the device exceptional stability, electrical stability, and solvent resistance, improving its application prospect in solution phase sensing/detection. Such characteristics could be used to sense, transduce, and respond to external stimuli, especially in solution phase to monitor the important analytes, such as Hg 2+ in a flowing sewage environment. We believe that such easy‐to‐manufacture AG‐FETs with ultrahigh performance and ultrahigh stability could also show great application prospects in other significant fields.

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