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Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors (Small 37/2021)
Author(s) -
Sun Jiamin,
Zhuang Xinming,
Fan Yibo,
Guo Shuai,
Cheng Zichao,
Liu Dong,
Yin Yanxue,
Tian Yufeng,
Pang Zhiyong,
Wei Zhipeng,
Song Xiufeng,
Liao Lei,
Chen Feng,
Ho Johnny C.,
Yang Zaixing
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202170190
Subject(s) - field effect transistor , semiconductor , transistor , electron mobility , nanowire , materials science , metal , optoelectronics , field (mathematics) , channel (broadcasting) , condensed matter physics , field effect , nanotechnology , electrical engineering , physics , quantum mechanics , engineering , mathematics , voltage , pure mathematics , metallurgy
Field‐Effect‐Transistors Metal‐semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting to the regulation of carrier mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai‐xing Yang, and co‐workers demonstrate that by simply constructing the metal‐semiconductor junctions, the peak hole mobility of GaSb nanowire field‐effect‐transistor can be enhanced to the highest value of 3372 cm 2 V −1 s −1 in the atmosphere, showing three times than the un‐deposited one.