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Complementary Photo‐Synapses: Complementary Photo‐Synapses Based on Light‐Stimulated Porphyrin‐Coated Silicon Nanowires Field‐Effect Transistors (LPSNFET) (Small 30/2021)
Author(s) -
Li Xiaokang,
Yu Bocheng,
Wang Bowen,
Bi Ran,
Li Haixia,
Tu Kun,
Chen Gong,
Li Zhihong,
Huang Ru,
Li Ming
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202170156
Subject(s) - porphyrin , nanowire , cmos , materials science , transistor , optoelectronics , silicon , field effect transistor , silicon nanowires , nanotechnology , nanoscopic scale , electrical engineering , chemistry , photochemistry , engineering , voltage
In article number 2101434, Ming Li and co‐workers propose a CMOS‐compatible Light‐stimulated Porphyrin‐coated Silicon Nanowire Field Effect Transistor (LPSNFET) to form the complementary photo‐synapses with only two CMOS‐like transistors. LPSNFET exhibits five‐fold improvement in photo sensitivity compared to the bare silicon nanowire devices. Complementarily behaviors can be realized by modulating SiNW/porphyrin interface, and the CMOS compatibility provides a potential application in future large scale in‐sensor computing.