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Memristive Devices: Planar and Transparent Memristive Devices Based on Titanium Oxide Coated Silver Nanowire Networks with Tunable Switching Voltage (Small 21/2021)
Author(s) -
Resende Joao,
Sekkat Abderrahime,
Nguyen Viet Huong,
Chatin Tomy,
Jiménez Carmen,
Burriel Mónica,
Bellet Daniel,
MuñozRojas David
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202170102
Subject(s) - materials science , optoelectronics , planar , voltage , oxide , threshold voltage , resistive random access memory , nanowire , titanium oxide , thermal conduction , titanium , nanotechnology , electrical engineering , transistor , computer science , composite material , chemistry , computer graphics (images) , metallurgy , engineering , organic chemistry
In article number 2007344, Daniel Bellet, David Muñoz‐Rojas, and co‐workers demonstrate transparent resistive switching devices entirely fabricated by open‐air approaches, without a deposition chamber. The threshold voltage can be tuned by adjusting the density of AgNWs, while maintaining a high LRS/HRS ratio. The researchers show the effect of oxide thickness on the threshold‐switching phenomenon, thus shedding light on the conduction mechanism of this type of switching devices.