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Broadband Photodetection: 2D Silicon‐Based Semiconductor Si 2 Te 3 toward Broadband Photodetection (Small 13/2021)
Author(s) -
Chen Jiawang,
Tan Chaoyang,
Li Gang,
Chen Lijie,
Zhang Hanlin,
Yin Shiqi,
Li Ming,
Li Liang,
Li Guanghai
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202170060
Subject(s) - photodetection , silicon , materials science , semiconductor , optoelectronics , broadband , chemical vapor deposition , photoluminescence , optics , photodetector , physics
In article number 2006496, Liang Li, Guanghai Li, and co‐workers synthesize silicon‐based semiconductor Si 2 Te 3 crystals using a chemical vapor deposition technique. The combined features of silicon and layered structure bridge the 2D materials family and silicon‐based materials family together, while the intrinsic defects in Si 2 Te 3 yield ultrawide photoluminescence spectra and broadband spectral response from 405 nm up to 1064 nm.