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Flexible Transistor‐Structured Memory: Recent Process of Flexible Transistor‐Structured Memory (Small 9/2021)
Author(s) -
Ni Yao,
Wang Yongfei,
Xu Wentao
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202170037
Subject(s) - transistor , process (computing) , materials science , nanotechnology , field effect transistor , computer science , optoelectronics , electrical engineering , voltage , engineering , operating system
In article number 1905332, Yao Ni, Yongfei Wang, and Wentao Xu review the recent progress of flexible transistor‐structured memory (FTSM). Various FTSMs with different mechanisms and functions are elucidated, including three types of classic FTSMs based on floating‐gate, charge‐trap and ferroelectric mechanisms, as well as two kinds of special FTSMs, with optical response and synaptic plasticity, respectively. This review could help readers better understand the developing trend of this research field.