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Defect Etching of Phase‐Transition‐Assisted CVD‐Grown 2H‐MoTe 2
Author(s) -
Zhou Yaoqiang,
Tao Li,
Chen Zefeng,
Lai Haojie,
Xie Weiguang,
Xu JianBin
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202102146
Subject(s) - materials science , grain boundary , etching (microfabrication) , chemical vapor deposition , sublimation (psychology) , amorphous solid , isotropic etching , nanotechnology , optoelectronics , crystallography , composite material , microstructure , chemistry , psychology , layer (electronics) , psychotherapist
2D molybdenum ditelluride (MoTe 2 ) with polymorphism is a promising candidate to developing phase‐change memory, high‐performance transistors and spintronic devices. The phase‐transition‐assisted chemical vapor deposition (CVD) process has been used to prepare large‐scale 2H‐MoTe 2 with large grain size and low density of grain boundary. However, because of the lack of precise control of the growth condition, some defects including the amorphous regions and grain boundaries in 2H‐MoTe 2 are hardly avoidable. Here, a facile method of selectively etching defects in large‐scale CVD‐grown 2H‐MoTe 2 by triiodide ion (I 3 − ) solution is reported. The defect etching is attributed to the reduced lattice symmetry, high chemisorption activity and high conductivity of the defects due to the high density of Te vacancies. The treated 2H‐MoTe 2 shows the suppressed hysteresis in the electrical transfer curve, enhances hole mobility and the higher effective barrier height on the metal contact, suggesting the decreased density of defects. Further chemical analysis indicates that the 2H‐MoTe 2 is not damaged or doped by I 3 − solution during the etching process. This simple and low‐cost post‐processing method is effective for etching the defects in large‐area 2H‐MoTe 2 for high‐performance device applications.