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Doped Vertical Organic Field‐Effect Transistors Demonstrating Superior Bias‐Stress Stability
Author(s) -
Qiu Xincan,
Guo Jing,
Chen PingAn,
Chen Kaixuan,
Liu Yu,
Ma Chao,
Chen Huajie,
Hu Yuanyuan
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202101325
Subject(s) - materials science , doping , stress (linguistics) , passivation , optoelectronics , field effect transistor , planar , transistor , dielectric , nanotechnology , computer science , layer (electronics) , voltage , electrical engineering , linguistics , philosophy , computer graphics (images) , engineering
Bias‐stress stability is essential to the practical applications of organic field‐effect transistors (OFETs), yet it remains a challenge issue in conventional planar OFETs. Here, the feasibility of achieving high bias‐stress stability in vertical structured OFETs (VOFETs) in combination with doping techniques is demonstrated. VOFETs with silver nanowires as source electrodes are fabricated and the device performance is optimized by understanding the influence of device parameters on performance. Then, the bias‐stress stability of the optimized PDVT‐10 VOFETs is investigated and found to be superior to the corresponding planar OFETs, which is attributed to reduced trapping effects of gate dielectrics in the VOFETs. Moreover, the bias‐stress stability can be further improved by doping PDVT‐10 to passivate bulk traps. Consequently, the characteristic time of doped PDVT‐10 VOFETs extracted from stretched exponential equation is found to be over four times larger than that of the planar PDVT‐10 OFETs under the same bias‐stress conditions. These results present the promising applications of VOFETs as well as an effective strategy to achieve highly bias‐stress stable OFETs.