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Realization of Large Scale, 2D van der Waals Heterojunction of SnS 2 /SnS by Reversible Sulfurization
Author(s) -
Li Shuhui,
Wang Yu,
Cheng Peng,
Feng Baojie,
Chen Lan,
Wu Kehui
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202101154
Subject(s) - heterojunction , materials science , monolayer , annealing (glass) , van der waals force , optoelectronics , chalcogen , nanotechnology , chemistry , crystallography , molecule , organic chemistry , composite material
2D van der Waals heterojunction provides an attractive opportunity for realizing novel electronic or optoelectronic devices. It remains challenging to realize high‐quality heterostructures through scalable methods such as molecular epitaxy growth (MBE). Here, growth of few‐layer SnS thin films is reported on mica and Nb‐doped SrTiO 3 (100) substrates by MBE. Then the top layer of SnS film is uniformly sulfurized to monolayer SnS 2 in a sulfur atmosphere, resulting in a high‐quality SnS 2 /SnS 2D heterojunction. Furthermore, the SnS 2 layer can be recovered to SnS by annealing SnS 2 /SnS without sulfur supply, indicating the heterojunction formation is reversible. The scanning tunneling spectroscopy measurements on SnS 2 /SnS heterostructure indicate the type‐II band alignment in SnS 2 /SnS. The work provides a promising approach to construct artificial 2D heterojunctions with desired properties, which could be extended to other sulfide and selenide systems.