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Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates
Author(s) -
Li Jing,
Wang Shuang,
Jiang Qi,
Qian Haoji,
Hu Shike,
Kang He,
Chen Chen,
Zhan Xiaoyi,
Yu Aobo,
Zhao Sunwen,
Zhang Yanhui,
Chen Zhiying,
Sui Yanping,
Qiao Shan,
Yu Guanghui,
Peng Songang,
Jin Zhi,
Liu Xinyu
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202100743
Subject(s) - monolayer , materials science , chemical vapor deposition , epitaxy , zigzag , optoelectronics , nanotechnology , wafer , transition metal , single crystal , crystal (programming language) , microelectronics , crystallography , layer (electronics) , chemistry , biochemistry , geometry , mathematics , computer science , programming language , catalysis
Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next‐generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS 2 (SC‐MoS 2 ) monolayer is reported on Au (111) film across a two‐inch c‐plane sapphire wafer by CVD. The MoS 2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS 2 domains on Au (111) is a temperature‐guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS 2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS 2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.