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Atomically Precise Control of Carbon Insertion into hBN Monolayer Point Vacancies using a Focused Electron Beam Guide
Author(s) -
Park Hyoju,
Wen Yi,
Li Sylvia Xin,
Choi Woojin,
Lee GunDo,
Strano Michael,
Warner Jamie H.
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202100693
Subject(s) - materials science , nanodot , vacancy defect , monolayer , crystallographic defect , atom (system on chip) , carbon fibers , covalent bond , crystallography , nanotechnology , chemical physics , molecular physics , atomic physics , chemistry , physics , organic chemistry , composite number , computer science , composite material , embedded system
Precise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub‐2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non‐hydrogenated covalently bonded C molecules embedded in the insulating hBN.