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Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor
Author(s) -
Jin DongGyu,
Kim SeungHwan,
Kim SeungGeun,
Park June,
Park Euyjin,
Yu HyunYong
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202100242
Subject(s) - neuromorphic engineering , materials science , controllability , synapse , electrolyte , transistor , coupling (piping) , optoelectronics , computer science , voltage , nanotechnology , biological system , electrical engineering , electrode , artificial neural network , chemistry , neuroscience , artificial intelligence , engineering , mathematics , metallurgy , biology
Presently, the 3‐terminal artificial synapse device has been in focus for neuromorphic computing systems owing to its excellent weight controllability. Here, an artificial synapse device based on the 3‐terminal solid‐state electrolyte‐gated transistor is proposed to achieve outstanding synaptic characteristics with a human‐like mechanism at low power. Novel synaptic characteristics are accomplished by precisely tuning the threshold voltage using the proton‐electron coupling effect, which is caused by proton migration inside the electrolyte. However, these synaptic characteristics are degraded because traps at the interface of channel/electrolyte disturb the proton–electron coupling effect. To minimize degradation, the oxygen plasma treatment is performed to reduce interface traps. As a result, symmetric weight updates and outstanding synaptic characteristics are achieved. Furthermore, high repeatability and long‐term plasticity are observed at low operating power, which is essential for artificial synapses. Therefore, this study shows the progress of artificial synapses and proposes a promising method, a low‐power neuromorphic system, to achieve high accuracy.