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Toward Highly Robust Nonvolatile Multilevel Memory by Fine Tuning of the Nanostructural Crystalline Solid‐State Order
Author(s) -
Li Yang,
Zhang Cheng,
Ling Songtao,
Ma Chunlan,
Zhang Jinlei,
Jiang Yucheng,
Zhao Run,
Li Hua,
Lu Jianmei,
Zhang Qichun
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202100102
Subject(s) - materials science , non volatile memory , resistive random access memory , active layer , solid state , nanotechnology , layer (electronics) , substrate (aquarium) , optoelectronics , electrode , engineering physics , chemistry , oceanography , geology , engineering , thin film transistor
Organic resistive memory (ORM) offers great promise for next‐generation high‐density multilevel‐cell (MLC) data storage. However, the fine tuning of crystalline order among its active layer still remains challenging, which largely restricts ORM behavior. Here, an exceptional solid‐state transition from disordered orientations to highly‐uniform orientation within the ORM layer is facilely triggered via molecular strategic tailoring. Two diketopyrrolopyrrole‐based small molecular analogues (NI 1 TDPP and NI 2 TDPP) are demonstrated to display different symmetry. The asymmetric NI 1 TDPP shows an irregular solid‐state texture, while the centro‐symmetric NI 2 TDPP conforms to an ordered out‐of‐plane single‐crystalline pattern that aligns with the foremost charge transportation along the substrate normal, and exhibits excellent MLC memory characteristics. Moreover, this highly oriented pattern guarantees the large‐area film uniformity, leading to the twofold increase in the yield of as‐fabricated ORM devices. This study reveals that the solid‐state crystalline nanostructural order of organic materials can be controlled by reasonable molecular design to actuate high‐performance organic electronic circuits.