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Mixed‐Dimensional Heterostructures: Mixed‐Dimensional In‐Plane Heterostructures from 1D Mo 6 Te 6 and 2D MoTe 2 Synthesized by Te‐Flux‐Controlled Chemical Vapor Deposition (Small 47/2020)
Author(s) -
Kim Hyeonkyeong,
Johns James E.,
Yoo Youngdong
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202070255
Subject(s) - heterojunction , chemical vapor deposition , materials science , semiconductor , plane (geometry) , metal , enhanced data rates for gsm evolution , flux (metallurgy) , layer (electronics) , nanotechnology , optoelectronics , condensed matter physics , physics , geometry , metallurgy , computer science , telecommunications , mathematics
In article number 2002849, Youngdong Yoo and co‐workers chemically build mixed‐dimensional in‐plane 1D‐2D Mo 6 Te 6 –MoTe 2 heterostructures in which semiconducting few‐layer 2H MoTe 2 circular domains are edge‐contacted by metallic 1D Mo 6 Te 6 wire networks. These in‐plane 1D–2D metal–semiconductor heterostructures can be utilized as advanced materials for high‐performance 2D electronics.