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Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)
Author(s) -
Tang Jian,
Wei Zheng,
Wang Qinqin,
Wang Yu,
Han Bo,
Li Xiaomei,
Huang Biying,
Liao Mengzhou,
Liu Jieying,
Li Na,
Zhao Yanchong,
Shen Cheng,
Guo Yutuo,
Bai Xuedong,
Gao Peng,
Yang Wei,
Chen Lan,
Wu Kehui,
Yang Rong,
Shi Dongxia,
Zhang Guangyu
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202070229
Subject(s) - doping , monolayer , materials science , electronics , in situ , nanotechnology , oxygen , optoelectronics , engineering physics , chemistry , physics , organic chemistry
In article number 2004276, Rong Yang, Guangyu Zhang, and co‐workers develop an in situ oxygen substitutional doping in MoS 2 monolayers by one step chemical vapor deposition process and lateral heterostructures with controlled doping concentrations are reliably fabricated. The bandgap tunability (from 2.25 to 1.75 eV) and n‐doping electronic properties are realized. This nondestructive oxygen doping technique holds great promise on future electronics based on 2D semiconductors.