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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
Author(s) -
Dan Minjiang,
Hu Gongwei,
Nie Jiaheng,
Li Lijie,
Zhang Yan
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202008106
Subject(s) - wurtzite crystal structure , optoelectronics , photoelectric effect , heterojunction , quantum well , materials science , polarization (electrochemistry) , semiconductor , infrared , nitride , absorption (acoustics) , wavelength , quantum , optics , physics , nanotechnology , chemistry , quantum mechanics , laser , layer (electronics) , zinc , metallurgy , composite material
III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition.