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2D Silicon‐Based Semiconductor Si 2 Te 3 toward Broadband Photodetection
Author(s) -
Chen Jiawang,
Tan Chaoyang,
Li Gang,
Chen Lijie,
Zhang Hanlin,
Yin Shiqi,
Li Ming,
Li Liang,
Li Guanghai
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202006496
Subject(s) - silicon , photodetector , photodetection , optoelectronics , materials science , semiconductor , photoluminescence , broadband , optics , physics
Abstract Silicon‐based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical‐optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next‐generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon‐based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si 2 Te 3 ) 2D material, a IV−VI silicon‐based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550–1050 nm reveals the intrinsic defects in Si 2 Te 3 . The Si 2 Te 3 ‐based field‐effect transistors (FETs) and photodetectors show a typical p‐type behavior and a remarkable broadband spectral response in the range of 405–1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W −1 and 2.81 × 10 12 Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon‐based materials in the field of optoelectronics.