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Preparation of CdS y Se 1− y ‐MoS 2 Heterostructures via Cation Exchange of Pre‐Epitaxially Synthesized Cu 2− χ S y Se 1− y ‐MoS 2 for Photocatalytic Hydrogen Evolution
Author(s) -
Chen Junze,
Wu XueJun,
Lu Qipeng,
Zhao Meiting,
Yin PengFei,
Ma Qinglang,
Nam GwangHyeon,
Li Bing,
Chen Bo,
Zhang Hua
Publication year - 2021
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202006135
Subject(s) - heterojunction , epitaxy , chalcogen , materials science , catalysis , transition metal , nanotechnology , metal , optoelectronics , photocatalysis , photonics , chemistry , crystallography , metallurgy , layer (electronics) , biochemistry
Abstract Construction of 2D transition metal dichalcogenide (TMD)‐based epitaxial heterostructures with different compositions is important for various promising applications, including electronics, photonics, and catalysis. However, the rational design and controlled synthesis of such kind of heterostructures still remain challenge, especially for those consisting of layered TMDs and other non‐layered materials. Here, a facile one‐pot, wet‐chemical method is reported to synthesize Cu 2− χ S y Se 1− y ‐MoS 2 heterostructures in which two types of different epitaxial configurations, i.e., vertical and lateral epitaxies, coexist. The chalcogen ratio (S/Se) in Cu 2− χ S y Se 1− y and the loading amount of MoS 2 in the heterostructures can be tuned. Impressively, the obtained Cu 2− χ S y Se 1− y ‐MoS 2 heterostructures can be transformed to CdS y Se 1− y ‐MoS 2 without morphological change via cation exchange. As a proof‐of‐concept application, the obtained CdS y Se 1− y ‐MoS 2 heterostructures with controllable compositions are used as photocatalysts, exhibiting distinctive catalytic activities toward the photocatalytic hydrogen evolution under visible light irradiation. The method paves the way for the synthesis of different TMD‐based lateral epitaxial heterostructures with unique properties for various applications.