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In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics
Author(s) -
Tang Jian,
Wei Zheng,
Wang Qinqin,
Wang Yu,
Han Bo,
Li Xiaomei,
Huang Biying,
Liao Mengzhou,
Liu Jieying,
Li Na,
Zhao Yanchong,
Shen Cheng,
Guo Yutuo,
Bai Xuedong,
Gao Peng,
Yang Wei,
Chen Lan,
Wu Kehui,
Yang Rong,
Shi Dongxia,
Zhang Guangyu
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202004276
Subject(s) - monolayer , materials science , dopant , doping , molybdenum disulfide , semiconductor , nanotechnology , optoelectronics , chemical vapor deposition , field effect transistor , germanium , oxygen , analytical chemistry (journal) , transistor , silicon , chemistry , electrical engineering , engineering , organic chemistry , voltage , chromatography , metallurgy
In 2D semiconductors, doping offers an effective approach to modulate their optical and electronic properties. Here, an in situ doping of oxygen atoms in monolayer molybdenum disulfide (MoS 2 ) is reported during the chemical vapor deposition process. Oxygen concentrations up to 20–25% can be reliable achieved in these doped monolayers, MoS 2‐ x O x . These oxygen dopants are in a form of substitution of sulfur atoms in the MoS 2 lattice and can reduce the bandgap of intrinsic MoS 2 without introducing in‐gap states as confirmed by photoluminescence spectroscopy and scanning tunneling spectroscopy. Field effect transistors made of monolayer MoS 2‐ x O x show enhanced electrical performances, such as high field‐effect mobility (≈100 cm 2 V −1 s −1 ) and inverter gain, ultrahigh devices’ on/off ratio (>10 9 ) and small subthreshold swing value (≈80 mV dec −1 ). This in situ oxygen doping technique holds great promise on developing advanced electronics based on 2D semiconductors.