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Laser Writable Multifunctional van der Waals Heterostructures
Author(s) -
Su BaoWang,
Zhang XiLin,
Yao BinWei,
Guo HaoWei,
Li DeKang,
Chen XuDong,
Liu ZhiBo,
Tian JianGuo
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202003593
Subject(s) - materials science , heterojunction , bipolar junction transistor , optoelectronics , rectification , laser , molybdenum disulfide , diode , van der waals force , transistor , nanotechnology , electrical engineering , voltage , chemistry , optics , molecule , physics , organic chemistry , metallurgy , engineering
Abstract Achieving multifunctional van der Waals nanoelectronic devices on one structure is essential for the integration of 2D materials; however, it involves complex architectural designs and manufacturing processes. Herein, a facile, fast, and versatile laser direct write micro/nanoprocessing to fabricate diode, NPN (PNP) bipolar junction transistor (BJT) simultaneously based on a pre‐fabricated black phosphorus/molybdenum disulfide heterostructure is demonstrated. The PN junctions exhibit good diode rectification behavior. Due to different carrier concentrations of BP and MoS 2 , the NPN BJT, with a narrower base width, renders better performance than the PNP BJT. Furthermore, the current gain can be modulated efficiently through laser writing tunable base width W B , which is consistent with the theoretical results. The maximum gain for NPN and PNP is found to be ≈41 (@ W B ≈600 nm) and ≈12 (@ W B ≈600 nm), respectively. In addition, this laser write processing technique also can be utilized to realize multifunctional WSe 2 /MoS 2 heterostructure device. The current work demonstrates a novel, cost‐effective, and universal method to fabricate multifunctional nanoelectronic devices. The proposed approach exhibits promise for large‐scale integrated circuits based on 2D heterostructures.