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Programmable Organic‐Free Negative Differential Resistance Memristor Based on Plasmonic Tunnel Junction
Author(s) -
Xu Chen,
Li Chuanping,
Jin Yongdong
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.202002727
Subject(s) - quantum tunnelling , plasmon , materials science , memristor , optoelectronics , nanotechnology , tunnel junction , nanoparticle , planar , plasmonic nanoparticles , electron , nanowire , electronic engineering , computer science , physics , computer graphics (images) , quantum mechanics , engineering
A novel negative differential resistance (NDR) phenomenon is reported herein based on planar plasmonic tunnel junction, resulting from plasmon‐assisted long‐range electron tunneling (P‐tunneling) and electronic caching effect of Au@SiO 2 nanoparticles. The tunnel junction is made of shell‐insulated Au@SiO 2 nanoparticle nanomembrane, in which SiO 2 shells act as a tunable tunneling barrier, while the Au core not only support the plasmonic effect to enable P‐tunneling, but also act as electronic caches to render NDR responses. The NDR peak voltage and current can be programmably controlled by varying the thickness of SiO 2 shell and the size of Au core to tune barrier level for electron transport. In addition, light induced plasmonic effect can be further managed to regulate the NDR behavior by fine‐tuning P‐tunneling. The phenomenon is exploited for robust use as memristors. The work provides a new mechanism for the generation of NDR effect and may open a way for the development of robust and new conceptual nanoelectronic devices.