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Field‐Effect Transistors: A Facile and Effective Method for Patching Sulfur Vacancies of WS 2 via Nitrogen Plasma Treatment (Small 36/2019)
Author(s) -
Jiang Jianfeng,
Zhang Qinghua,
Wang Aizhu,
Zhang Yu,
Meng Fanqi,
Zhang Congcong,
Feng Xianjin,
Feng Yuanping,
Gu Lin,
Liu Hong,
Han Lin
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201970195
Subject(s) - materials science , sulfur , nitrogen , plasma , nitrogen atom , nanotechnology , doping , transistor , field effect transistor , transition metal , optoelectronics , chemistry , electrical engineering , metallurgy , catalysis , physics , engineering , organic chemistry , quantum mechanics , voltage , group (periodic table)
In article number 1901791, Lin Han, Hong Liu, Lin Gu, and co‐workers present a facile and effective defects‐patching approach via nitrogen plasma doping for inevitable vacancies in transition metal dichalcogenides, which opens up new opportunities for the use of high‐performance 2D devices in practical electronic applications. In the cover, the five‐color stone in the hands of Nuwa refers to the nitrogen atom.