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Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)
Author(s) -
Zhang Xuefu,
Wu Tianru,
Jiang Qi,
Wang Huishan,
Zhu Hailong,
Chen Zhiying,
Jiang Ren,
Niu Tianchao,
Li Zhuojun,
Zhang Youwei,
Qiu Zhijun,
Yu Guanghui,
Li Ang,
Qiao Shan,
Wang Haomin,
Yu Qingkai,
Xie Xiaoming
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201970120
Subject(s) - graphene , chemical vapor deposition , materials science , wafer , substrate (aquarium) , epitaxy , nickel , single crystal , nanotechnology , graphene nanoribbons , crystal (programming language) , optoelectronics , chemical engineering , metallurgy , crystallography , chemistry , geology , engineering , layer (electronics) , oceanography , computer science , programming language
Single‐crystal graphene wafers (SCGWs) are an essential requirement for graphene's scalable utilization in electronics' circuits. In article number 1805395 , Xiaoming Xie and co‐workers grow high quality 6 in. SCGWs by chemical vapor deposition on a unique (111) Cu 85 Ni 15 substrate at 750 °C, taking advantage of the ultra‐flat single crystalline Cu/Ni substrate and nickel's high catalytic power.