Premium
Semiconductor‐to‐Metal Transitions: Nitrogen Boosts Defective Vanadium Oxide from Semiconducting to Metallic Merit (Small 22/2019)
Author(s) -
Ma Zhongyuan,
Rui Kun,
Zhang Yao,
Li Desheng,
Wang Qingqing,
Zhang Qiao,
Du Min,
Yan Jiaxu,
Zhang Chao,
Huang Xiao,
Zhu Jixin,
Huang Wei
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201970116
Subject(s) - materials science , vanadium , dopant , metal , semiconductor , nitrogen , vanadium oxide , oxide , nanotechnology , density functional theory , vanadium nitride , inorganic chemistry , nitride , optoelectronics , computational chemistry , doping , chemistry , metallurgy , organic chemistry , layer (electronics)
In article number 1900583 , Kun Rui, Jiaxu Yan, Jixin Zhu, and co‐workers report a topochemical strategy for large‐scale production of 2D vanadium oxide nanosheets featured with desirable metallic electron transportation. As evidenced by density functional theory calculations and experimental results, the electron band structure engineering can be realized by rational incorporation of nitrogen dopants and oxygen vacancies.