Premium
2D Materials: Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures (Small 14/2019)
Author(s) -
Wang Wenliang,
Li Yuan,
Zheng Yulin,
Li Xiaochan,
Huang Liegen,
Li Guoqiang
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201970076
Subject(s) - band gap , graphene , materials science , heterojunction , optoelectronics , wide bandgap semiconductor , electronic band structure , ultraviolet , lattice (music) , nanotechnology , condensed matter physics , physics , acoustics
In article number 1802995 , Guoqiang Li and co‐workers demonstrate a 2D GaN with wellcontrolled lattice structure and bandgap on graphene/Si hetero‐structure. The bandgap for 2D GaN in P6 3 MC and R3m structure is determined to be ≈4.65 and ≈4.18 eV, respectively. The 2D GaN shows a great potential for the development of deep ultraviolet devices.