Premium
2D Materials: Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures (Small 14/2019)
Author(s) -
Wang Wenliang,
Li Yuan,
Zheng Yulin,
Li Xiaochan,
Huang Liegen,
Li Guoqiang
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201970076
Subject(s) - band gap , graphene , materials science , heterojunction , optoelectronics , wide bandgap semiconductor , electronic band structure , ultraviolet , lattice (music) , nanotechnology , condensed matter physics , physics , acoustics
In article number 1802995 , Guoqiang Li and co‐workers demonstrate a 2D GaN with wellcontrolled lattice structure and bandgap on graphene/Si hetero‐structure. The bandgap for 2D GaN in P6 3 MC and R3m structure is determined to be ≈4.65 and ≈4.18 eV, respectively. The 2D GaN shows a great potential for the development of deep ultraviolet devices.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom