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Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS 2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019)
Author(s) -
Roh Jeongkyun,
Ryu Jae Hyeon,
Baek Geun Woo,
Jung Heeyoung,
Seo Seung Gi,
An Kunsik,
Jeong Byeong Guk,
Lee Doh C.,
Hong Byung Hee,
Bae Wan Ki,
Lee JongHo,
Lee Changhee,
Jin Sung Hun
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201970037
Subject(s) - octadecyltrichlorosilane , threshold voltage , quantum dot , transistor , optoelectronics , materials science , logic gate , field effect transistor , voltage , nanotechnology , electronic engineering , electrical engineering , engineering , silicon
In article number 1803852 , Changhee Lee, Sung Hun Jin, and co‐workers develop an adjustment scheme for threshold voltage of multi‐layered MoS 2 field effect transistors via octadecyltrichlorosilane treatment on the back channel of multi‐layered MoS 2 . More impressively, enhancement‐mode MoS 2 logic gates and active matrixed quantum dot pixels are successfully demonstrated, which can be potentially utilized for next‐generation device opportunities.