Premium
Direct Growth of Perovskite Crystals on Metallic Electrodes for High‐Performance Electronic and Optoelectronic Devices
Author(s) -
Liu Jia,
Liu Fengjing,
Liu Haining,
Hou Rui,
Yue Junyi,
Cai Jinzhong,
Peng Zhisheng,
Impundu Julienne,
Xie Liming,
Li Yong Jun,
Sun Lianfeng
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201906185
Subject(s) - materials science , perovskite (structure) , optoelectronics , photodetector , responsivity , heterojunction , photoconductivity , schottky barrier , passivation , fabrication , field effect transistor , electronics , transistor , nanotechnology , layer (electronics) , diode , electrical engineering , medicine , alternative medicine , pathology , voltage , engineering , chemical engineering
Metal halide perovskite has attracted enhanced interest for its diverse electronic and optoelectronic applications. However, the fabrication of micro‐ or nanoscale crystalline perovskite functional devices remains a great challenge due to the fragility, solvent, and heat sensitivity of perovskite crystals. Here, a strategy is proposed to fabricate electronic and optoelectronic devices by directly growing perovskite crystals on microscale metallic structures in liquid phase. The well‐contacted perovskite/metal interfaces ensure these heterostructures serve as high‐performance field effect transistors (FETs) and excellent photodetector devices. When serving as an FET, the on/off ratio is as large as 10 6 and the mobility reaches up to ≈2.3 cm 2 V −1 s −1 . A photodetector is displayed with high photoconductive switching ratio of ≈10 6 and short response time of ≈4 ms. Furthermore, the photoconductive response is proved to be band‐bending‐assisted separation of photoexcited carriers at the Schottky barrier of the silver and p‐type perovskites.