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Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation
Author(s) -
Hou Yue,
Wang Liming,
Zou Xuming,
Wan Da,
Liu Chang,
Li Guoli,
Liu Xingqiang,
Liu Yufang,
Jiang Changzhong,
Ho Johnny C.,
Liao Lei
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201905609
Subject(s) - materials science , photodetector , perovskite (structure) , optoelectronics , photodetection , responsivity , indium tin oxide , nanowire , photodiode , specific detectivity , nanotechnology , thin film , chemical engineering , engineering
All‐inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP‐based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr 3 thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr 3 and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 10 6 A W −1 , which is about 100‐fold better than the previous best results of CsPbBr 3 ‐based photodetectors, together with the fast response (0.45/0.55 s), long‐term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 10 13 Jones is achieved. More importantly, the optimized spin‐coating manufacturing process is highly beneficial for achieving uniform InGaZnO‐ITO/perovskite hybrid films for high‐performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high‐performance photodetection.