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A Dual‐Gate MoS 2 Photodetector Based on Interface Coupling Effect
Author(s) -
Liao Fuyou,
Deng Jianan,
Chen Xinyu,
Wang Yin,
Zhang Xinzhi,
Liu Jian,
Zhu Hao,
Chen Lin,
Sun Qingqing,
Hu Weida,
Wang Jianlu,
Zhou Jing,
Zhou Peng,
Zhang David Wei,
Wan Jing,
Bao Wenzhong
Publication year - 2020
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201904369
Subject(s) - photodetector , responsivity , optoelectronics , photodiode , materials science , photoelectric effect , dark current , coupling (piping) , heterojunction , metallurgy
2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS 2 photodetectors function under the photogating effect originated from the charge‐trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity ( R ) and large dark current. Here, a dual‐gated (DG) MoS 2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top‐gate voltage ( V TG ) and positive back‐gate voltage ( V BG ) to the MoS 2 channel, the photogenerated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ≈10 5 A W −1 and detectivity ( D *) of ≈10 14 Jones are achieved in several devices with different thickness under P in of 53 µW cm −2 at V TG = −5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS 2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. The results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.