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Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition
Author(s) -
Fu Xiao,
Zhang Lei,
Cho Hak D.,
Kang Tae Won,
Fu Dejun,
Lee Dongjin,
Lee Sang Wuk,
Li Luying,
Qi Tianyu,
Chan Abdul S.,
Yunusov Ziyodbek A.,
Panin Gennady N.
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201903809
Subject(s) - nanosheet , materials science , molybdenum disulfide , photoexcitation , quantum dot , optoelectronics , ultrashort pulse , phase transition , nanotechnology , laser , optics , excitation , physics , quantum mechanics , metallurgy
Abstract MoS 2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low‐dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS 2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS 2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS 2 2H‐1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real‐time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.