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Simultaneous Boost of Power Factor and Figure‐of‐Merit in In–Cu Codoped SnTe
Author(s) -
Guo Fengkai,
Cui Bo,
Geng Huiyuan,
Zhang Yang,
Wu Haijun,
Zhang Qian,
Yu Bo,
Pennycook Stephen J.,
Cai Wei,
Sui Jiehe
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201902493
Subject(s) - materials science , figure of merit , condensed matter physics , dopant , thermoelectric effect , seebeck coefficient , phonon scattering , doping , phonon , power factor , indium , amorphous solid , thermal conductivity , scattering , thermoelectric materials , optoelectronics , power (physics) , thermodynamics , optics , crystallography , physics , chemistry , composite material
Significantly enhanced thermoelectric performance is achieved for eco‐friendly SnTe by a coorperative effect between a dopant resonant energy level and interstitial defects. By manipulating the band structure through indium doping, the Seebeck coefficient is remarkably improved, leading to an enhanced power factor, with a high level of ≈29 µW cm −1 K −2 at 873 K. Lattice thermal conductivity is sharply reduced, approaching the amorphous limit, through the strong phonon scattering induced by multiple scales of Cu 2 Te nanoprecipitates, as well as Cu interstitials, leading to a high ZT value of ≈1.55 at 873 K.
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