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Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport
Author(s) -
Lee Han Sol,
Park Sam,
Lim June Yeong,
Yu Sanghyuck,
Ahn Jongtae,
Hwang Do Kyung,
Sim Yumin,
Lee JeHo,
Seong MaengJe,
Oh Sehoon,
Choi Hyoung Joon,
Im Seongil
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201901793
Subject(s) - doping , materials science , condensed matter physics , fermi level , thermal conduction , field effect transistor , electronic band structure , electron mobility , metal , optoelectronics , transistor , nanotechnology , electrical engineering , voltage , physics , electron , quantum mechanics , metallurgy , composite material , engineering
Band‐like transport behavior of H‐doped transition metal dichalcogenide (TMD) channels in field effect transistors (FET) is studied by conducting low‐temperature electrical measurements, where MoTe 2 , WSe 2 , and MoS 2 are chosen for channels. Doped with H atoms through atomic layer deposition, those channels show strong n‐type conduction and their mobility increases without losing on‐state current as the measurement temperature decreases. In contrast, the mobility of unintentionally (naturally) doped TMD FETs always drops at low temperatures whether they are p‐ or n‐type. Density functional theory calculations show that H‐doped MoTe 2 , WSe 2 , and MoS 2 have Fermi levels above conduction band edge. It is thus concluded that the charge transport behavior in H‐doped TMD channels is metallic showing band‐like transport rather than thermal hopping. These results indicate that H‐doped TMD FETs are practically useful even at low‐temperature ranges.