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Nitrogen Boosts Defective Vanadium Oxide from Semiconducting to Metallic Merit
Author(s) -
Ma Zhongyuan,
Rui Kun,
Zhang Yao,
Li Desheng,
Wang Qingqing,
Zhang Qiao,
Du Min,
Yan Jiaxu,
Zhang Chao,
Huang Xiao,
Zhu Jixin,
Huang Wei
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201900583
Subject(s) - materials science , dopant , heteroatom , oxide , nanotechnology , vanadium oxide , metal , vanadium , doping , electrochemistry , chemical engineering , optoelectronics , metallurgy , electrode , chemistry , ring (chemistry) , organic chemistry , engineering
2D metal oxide nanosheets have attracted substantial attention for various applications owing to their appealing advantages. Yet, the exploration of effective methodology for fabrication of metallic 2D metal oxides with a high concentration of N dopants in a scalable manner remains challenging. Herein, a topochemical strategy is demonstrated on vanadium oxide nanosheets by combining 2D nanostructuring, heteroatom‐doping, and defect engineering for modulating their intrinsic electronic structure and greatly enhancing their electrochemical property. O vacancies and N dopants (VON and VN bonds) are in situ formed in vanadium oxide via nitridation and lead to semiconductive‐to‐metallic phase transformation evidenced by experimental results and theoretical calculation. Overall, the N‐VO 0.9 nanosheets exhibit a metallic electron transportation behavior and excellent electrochemical performance. These findings shed light on the rational design and electron structure tuning of 2D nanostructures for energy and electronics applications.