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Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga 2 O 3 Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio
Author(s) -
Wu Zhengyuan,
Jiang Zhuoxun,
Song Pengyu,
Tian Pengfei,
Hu Laigui,
Liu Ran,
Fang Zhilai,
Kang Junyong,
Zhang TongYi
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201900580
Subject(s) - materials science , nanowire , nanosheet , nanotechnology , nanoelectronics , nanomaterials , electron mobility , nanocrystal , optoelectronics , bifunctional , epitaxy , catalysis , chemistry , biochemistry , layer (electronics)
2D β‐Ga 2 O 3 nanosheets, as fundamental materials, have great potential in next generations of ultraviolet transparent electrodes, high‐temperature gas sensors, solar‐blind photodetectors, and power devices, while their synthesis and growth with high crystalline quality and well‐controlled orientation have not been reported yet. The present study demonstrates how to grow single‐crystalline ultrathin quasi‐hexagonal β‐Ga 2 O 3 nanosheets with nanowire seeds and proposes a hierarchy‐oriented growth mechanism. The hierarchy‐oriented growth is initiated by epitaxial growth of a single‐crystalline ( 2 − 01 ) β‐Ga 2 O 3 nanowire on a GaN nanocrystal and followed by homoepitaxial growth of quasi‐hexagonal (010) β‐Ga 2 O 3 nanosheets. The undoped 2D (010) β‐Ga 2 O 3 nanosheet field effect transistor has a field‐effect electron mobility of 38 cm 2 V −1 s −1 and an on/off current ratio of 10 7 with an average subthreshold swing of 150 mV dec −1 . The from‐nanowires‐to‐nanosheets technique paves a novel way to fabricate nanosheets, which has great impact on the field of nanomaterial synthesis and growth and the area of nanoelectronics as well.