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Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO 2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors (Small 29/2018)
Author(s) -
Zhao Xiaoning,
Wang Zhongqiang,
Xie Yu,
Xu Haiyang,
Zhu Jiaxue,
Zhang Xintong,
Liu Weizhen,
Yang Guochun,
Ma Jiangang,
Liu Yichun
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201870136
Subject(s) - graphene , materials science , oxide , photocatalysis , resistive random access memory , reduction (mathematics) , nanocomposite , nanotechnology , resistive touchscreen , flexibility (engineering) , optoelectronics , computer science , electrical engineering , chemistry , catalysis , metallurgy , voltage , engineering , biochemistry , geometry , mathematics , statistics , computer vision
In article number 1801325 , Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO 2 ‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO 2 /ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory devices.