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Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition
Author(s) -
Zhang Xuefu,
Wu Tianru,
Jiang Qi,
Wang Huishan,
Zhu Hailong,
Chen Zhiying,
Jiang Ren,
Niu Tianchao,
Li Zhuojun,
Zhang Youwei,
Qiu Zhijun,
Yu Guanghui,
Li Ang,
Qiao Shan,
Wang Haomin,
Yu Qingkai,
Xie Xiaoming
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201805395
Subject(s) - graphene , materials science , chemical vapor deposition , nucleation , crystallinity , single crystal , epitaxy , evaporation , wafer , nanotechnology , substrate (aquarium) , optoelectronics , chemical engineering , crystallography , composite material , chemistry , physics , oceanography , organic chemistry , layer (electronics) , geology , engineering , thermodynamics
The future electronic application of graphene highly relies on the production of large‐area high‐quality single‐crystal graphene. However, the growth of single‐crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single‐crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm 2 V −1 s −1 at room temperature. This work shines light on a way toward a much lower temperature growth of high‐quality graphene in single crystallinity, which could benefit future electronic applications.