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High‐Performance Photoinduced Memory with Ultrafast Charge Transfer Based on MoS 2 /SWCNTs Network Van Der Waals Heterostructure
Author(s) -
Yang Zhenyu,
Hong Hao,
Liu Fang,
Liu Yuan,
Su Meng,
Huang Hao,
Liu Kaihui,
Liang Xuelei,
Yu Woo Jong,
Vu Quoc An,
Liu Xingqiang,
Liao Lei
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201804661
Subject(s) - heterojunction , ultrashort pulse , van der waals force , materials science , charge (physics) , optoelectronics , nanotechnology , chemical physics , molecule , physics , optics , quantum mechanics , laser
Photoinduced memory devices with fast program/erase operations are crucial for modern communication technology, especially for high‐throughput data storage and transfer. Although some photoinduced memories based on 2D materials have already demonstrated desirable performance, the program/erase speed is still limited to hundreds of micro‐seconds. A high‐speed photoinduced memory based on MoS 2 /single‐walled carbon nanotubes (SWCNTs) network mixed‐dimensional van der Waals heterostructure is demonstrated here. An intrinsic ultrafast charge transfer occurs at the heterostructure interface between MoS 2 and SWCNTs (below 50 fs), therefore enabling a record program/erase speed of ≈32/0.4 ms, which is faster than that of the previous reports. Furthermore, benefiting from the unique device structure and material properties, while achieving high‐speed program/erase operation, the device can simultaneously obtain high program/erase ratio (≈10 6 ), appropriate storage time (≈10 3 s), record‐breaking detectivity (≈10 16 Jones) and multibit storage capacity with a simple program/erase operation. It even has a potential application as a flexible optoelectronic device. Therefore, the designed concept here opens an avenue for high‐throughput fast data communications.