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Threshold Voltage Control of Multilayered MoS 2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates
Author(s) -
Roh Jeongkyun,
Ryu Jae Hyeon,
Baek Geun Woo,
Jung Heeyoung,
Seo Seung Gi,
An Kunsik,
Jeong Byeong Guk,
Lee Doh C.,
Hong Byung Hee,
Bae Wan Ki,
Lee JongHo,
Lee Changhee,
Jin Sung Hun
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201803852
Subject(s) - materials science , optoelectronics , threshold voltage , quantum dot , molybdenum disulfide , field effect transistor , transistor , transconductance , diode , octadecyltrichlorosilane , voltage , nanotechnology , electrical engineering , silicon , metallurgy , engineering
In recent past, for next‐generation device opportunities such as sub‐10 nm channel field‐effect transistors (FETs), tunneling FETs, and high‐end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS 2 ) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS 2 FETs by using self‐assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS 2 FETs in an enhancement mode with preservation of electrical parameters such as field‐effect mobility, subthreshold swing, and current on–off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature‐dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS 2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 V DD . More impressively, quantum dot light‐emitting diodes, driven by enhancement mode MoS 2 FETs, stably demonstrate 120 cd m −2 at the gate‐to‐source voltage of 5 V, exhibiting promising opportunities for future display application.