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Fabrication of Sub‐Micrometer‐Sized MoS 2 Thin‐Film Transistor by Phase Mode AFM Lithography
Author(s) -
Liu Lianqing,
Shi Jialin,
Li Meng,
Yu Peng,
Yang Tie,
Li Guangyong
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201803273
Subject(s) - materials science , lithography , micrometer , fabrication , nanotechnology , transistor , atomic force microscopy , optoelectronics , resist , optics , layer (electronics) , electrical engineering , voltage , medicine , physics , alternative medicine , pathology , engineering
The phase mode atomic force microscopy (AFM) lithography and monolayer lift‐off process are combined to fabricate electronics based on 2D materials (2DMs), which remove the need for pre‐fabricating markers and increase the accuracy of the overlay and alignment. The promising phase mode of AFM lithography eliminates the drawbacks of the conventional force mode such as the over‐cut, under‐cut, debris effect, and severe tip wear. The planar size of MoS 2 thin‐film transistors is shrunken down to sub‐micrometer by the proposed method, and the fabricated devices demonstrate n‐type characteristics. It offers a more flexible and easier way to fabricate prototypes of sub‐micrometer‐sized 2DMs based devices, and gives the opportunity to explore the size effect on the performance of 2DMs devices.