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Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures
Author(s) -
Wang Wenliang,
Li Yuan,
Zheng Yulin,
Li Xiaochan,
Huang Liegen,
Li Guoqiang
Publication year - 2019
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201802995
Subject(s) - materials science , heterojunction , band gap , optoelectronics , graphene , epitaxy , wide bandgap semiconductor , chemical vapor deposition , nitride , gallium nitride , electronic band structure , light emitting diode , nanotechnology , layer (electronics) , condensed matter physics , physics
2D group‐III nitride materials have shown a great promise for applications in optoelectronic devices thanks to their thickness‐dependent properties. However, the epitaxial growth of 2D group‐III nitrides remains a challenge. In this work, epitaxial growth of 2D GaN with well‐controlled lattice structures and bandgaps is achieved by plasma‐enhanced metal organic chemical vapor deposition via effective regulation of plasma energy and growth temperature. The structure of graphene/2D GaN/Si heterostructures is carefully investigated by high‐resolution transmission electron microscopy. The formation mechanism of the 2D GaN layer is clearly clarified by theoretical calculations. Furthermore, a bandgap for 2D GaN ranging from ≈4.18 to ≈4.65 eV varying with the numbers of layers is theoretically calculated and experimentally confirmed. 2D GaN with well‐controlled lattice structure and bandgap holds great potential for the development of deep ultraviolet light‐emitting diodes, energy conversion devices, etc.