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Flexible Transient Phototransistors by Use of Wafer‐Compatible Transferred Silicon Nanomembranes
Author(s) -
Li Gongjin,
Song Enming,
Huang Gaoshan,
Pan Ruobing,
Guo Qinglei,
Ma Fei,
Zhou Bin,
Di Zengfeng,
Mei YongFeng
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201802985
Subject(s) - responsivity , materials science , optoelectronics , photodiode , transient (computer programming) , wafer , photodetector , silicon , fabrication , electronics , dark current , transient response , nanotechnology , electrical engineering , computer science , medicine , alternative medicine , pathology , engineering , operating system
Flexible transient photodetectors, a form of optoelectronic sensors that can be physically self‐destroyed in a controllable manner, could be one of the important components for future transient electronic systems. In this work, a scalable, device‐first, and bottom‐up thinning process enables the fabrication of a flexible transient phototransistor on a wafer‐compatible transferred silicon nanomembrane. A gate modulation significantly restrains the dark current to 10 −12 A. With full exposure of the light‐sensitive channel, such a device yields an ultrahigh photo‐to‐dark current ratio of 10 7 with a responsivity of 1.34 A W −1 (λ = 405 nm). The use of a high‐temperature degradable polymer transient interlayer realizes on‐demand self‐destruction of the fabricated phototransistors, which offers a solution to the technical security issue of advanced flexible electronics. Such demonstration paves a new way for designing transient optoelectronic devices with a wafer‐compatible process.