Premium
Room‐Temperature Phototransistor with Negative Photoresponsivity of 10 8 A W −1 Using Fullerene‐Sensitized Aligned Carbon Nanotubes
Author(s) -
Bergemann Kevin,
Léonard François
Publication year - 2018
Publication title -
small
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.785
H-Index - 236
eISSN - 1613-6829
pISSN - 1613-6810
DOI - 10.1002/smll.201802806
Subject(s) - photodetector , responsivity , materials science , carbon nanotube , photoconductivity , optoelectronics , ultraviolet , photodiode , fullerene , infrared , optics , nanotechnology , physics , quantum mechanics
Detection of low intensity light down to a few photons requires photodetectors with high gain. A new photodetector is reported based on C 60 ‐sensitized aligned carbon nanotube (CNT) transistors with an extremely high responsivity of 10 8 A W −1 (gain > 10 8 ) in the ultraviolet and visible range, and 720 A W −1 (gain = 940) in the infrared range. In contrast to most sensitized phototransistors that operate on the photogating effect, the new photodetector operates on the modulation of the electrons scattering in the CNTs, leading to negative photoconductivity. Comparison with similar photodetectors using random CNT networks shows the benefit of using aligned CNTs. At room temperature, the aligned CNT photodetectors are demonstrated to detect a few tens of photons per CNT.